{"id":62499,"date":"2020-09-08T19:43:00","date_gmt":"2020-09-08T16:43:00","guid":{"rendered":"https:\/\/en.buradabiliyorum.com\/peel-apart-surfaces-drive-transistors-to-the-ledge\/"},"modified":"2020-09-08T19:43:00","modified_gmt":"2020-09-08T16:43:00","slug":"peel-apart-surfaces-drive-transistors-to-the-ledge","status":"publish","type":"post","link":"https:\/\/buradabiliyorum.com\/en\/peel-apart-surfaces-drive-transistors-to-the-ledge\/","title":{"rendered":"#Peel-apart surfaces drive transistors to the ledge"},"content":{"rendered":"

“#Peel-apart surfaces drive transistors to the ledge<\/strong>”<\/p>\n

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2<\/sub> nanoribbon on top of the ledge of Ga2<\/sub>O3<\/sub> substrate. Credit: 2020 KAUST” data-thumb=”https:\/\/scx1.b-cdn.net\/csz\/news\/tmb\/2020\/peelapartsur.jpg”><\/p>\n
\"Peel-apart2<\/sub> nanoribbon on top of the ledge of Ga2<\/sub>O3<\/sub> substrate. Credit: 2020 KAUST” width=”800″><\/img>
\n This cross-section view shows the long and monolayer MoS2<\/sub> nanoribbon on top of the ledge of Ga2<\/sub>O3<\/sub> substrate. Credit: 2020 KAUST
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Semiconductor manufacturers are paying more attention to two-dimensional materials, such as transition metal dichalcogenides (TMDs), following the discovery, at KAUST, of an epitaxial growth process of single-crystal TMDs nanoribbons.<\/p>\n

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An emerging trend in transistor design involves space-saving architectures that stack components on top of one other. TMDs have potential for these systems because they readily form into thin sheets, known as nanoribbons, which have electrical, optical and magnetic activity. However, typical semiconductor processes, such as photolithography, require complicated procedures to produce TMDs of sufficient quality for device purposes.<\/p>\n

In collaboration with researchers in the U.S., Belgium and Taiwan, Vincent Tung and colleagues at KAUST are developing alternative approaches to TMD fabrication using surface templates to direct single-crystal growth.
\nWhile analyzing candidates with high-resolution electron microscopy, researcher Areej Aljarb spotted something unusual about a semiconductor named gallium trioxide (Ga2<\/sub>O3<\/sub>). After peeling off layers of the flaky material using sticky tape, she saw arrays of narrow, terrace-like ledges that stepped up or down the entire Ga2<\/sub>O3<\/sub> surface.
\n“The steps are very steep and well-exposed,” says Aljarb. “And because the atoms located near the vicinity of these ledges have asymmetric structures, they can drive growth in specific directions.”<\/p>\n

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