{"id":694740,"date":"2025-10-14T11:45:13","date_gmt":"2025-10-14T08:45:13","guid":{"rendered":"https:\/\/buradabiliyorum.com\/en\/super-thin-semiconductor-overcomes-trade-off-between-speed-and-thermal-stability\/"},"modified":"2025-10-14T11:45:13","modified_gmt":"2025-10-14T08:45:13","slug":"super-thin-semiconductor-overcomes-trade-off-between-speed-and-thermal-stability","status":"publish","type":"post","link":"https:\/\/buradabiliyorum.com\/en\/super-thin-semiconductor-overcomes-trade-off-between-speed-and-thermal-stability\/","title":{"rendered":"Super-thin semiconductor overcomes trade-off between speed and thermal stability"},"content":{"rendered":"
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\n \"PKU
\n Thermal conductivity of the materials and device heat dissipation. Credit: Nature Electronics<\/i> (2025). DOI: 10.1038\/s41928-025-01447-6
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A team led by academician Huang Ru and Professor Wu Yanqing from the School of Integrated Circuits at Peking University has developed a super-thin, high-performance semiconductor with enhanced heat conductivity, enabled by a silicon carbide (SiC) substrate. The research, published<\/a> in Nature Electronics<\/i> under the title “Amorphous indium tin oxide transistors for power amplification above 10\u2009GHz,” marks a significant step forward in next-generation radio-frequency (RF) electronics.<\/p>\n

Amorphous oxide semiconductors (AOS) enable low-temperature, large-area, and chip-compatible processing with high carrier mobility. However, their inherently low thermal conductivity leads to self-heating effects, which limit top-gate scaling and high-frequency operation in app<\/a>lications such as 5G communications and the Internet of Things. Overcoming this trade-off between speed and thermal stability remains a central challenge.<\/p>\n

This breakthrough using a SiC substrate overcomes the trade-off between speed and thermal stability in AOS, paving the way for low-cost, flexible, and chip-compatible RF electronics. It demonstrates how combining high-frequency design with effective thermal management can deliver both performance and reliability in high-speed devices.<\/p>\n

The PKU team designed a 120 nm short-channel top-gate indium tin oxide (ITO) transistor on a high-thermal-conductivity SiC substrate, effectively eliminating self-heating even under a high supply voltage of 3 V and high temperature of 125\u00b0C. Furthermore, multiple tests have revealed that this transistor has broken AOS device records in speed, heat dissipation, and power.<\/p>\n

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\n \"PKU
\n Load-pull characterization of a top-gate ITO transistor on a SiC substrate. Credit: Nature Electronics<\/i> (2025). DOI: 10.1038\/s41928-025-01447-6
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The results show that a highly thermally conductive SiC substrate can effectively improve thermal management for ultrathin-body ITO channels in both direct current (DC) and RF performance. This provides a key advantage over other bulk channel materials that typically have thicknesses in the range of a few micrometers.<\/p>\n

These devices could find potential use in high-speed applications, including RF power amplifiers and data communications. Moreover, AOS could serve as thin-channel materials for future back-end-of-line-compatible electronics, offering a pathway toward scalable and energy-efficient RF integration.<\/p>\n

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More information:<\/strong>
\n\t\t\t\t\t\t\t\t\t\t\t\tQianlan Hu et al, Amorphous indium tin oxide transistors for power amplification above 10\u2009GHz, Nature Electronics<\/i> (2025). DOI: 10.1038\/s41928-025-01447-6<\/a><\/p>\n<\/p><\/div>\n

\n Provided by
\n Peking University
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\n Citation<\/strong>:
\n Super-thin semiconductor overcomes trade-off between speed and thermal stability (2025, October 13)
\n retrieved 14 October 2025
\n from https:\/\/techxplore.com\/news<\/a>\/2025-10-super-thin-semiconductor-thermal-stability.html\n <\/p>\n

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