#An electrical switch for magnetism
“#An electrical switch for magnetism” (Top) Schematic of field-effect transistor based on ultra-thin ferromagnetic semiconductor Cr2Ge2Te6. The material is covered with an ion gel to enhance the field effect. (Bottom) Magneto-resistance (MR) with increasing (blue) and decreasing (red) magnetic field sweeps. When the gate voltage (VG) is increased from 3 V (left) to 4 V…