Researchers at the Fraunhofer Institute for Applied Solid State Physics IAF have developed a gallium nitride (GaN)-based power electronics module for 800-volt bidirectional direct current (DC) charging systems. The module is part of the GaN4EmoBiL project (“GaN Power Semiconductors for Electric Mobility and System Integration via Bidirectional Charging”). Project partner Ambibox GmbH integrated the module into the demonstrator of a bidirectional, single-phase off-board charger for electric vehicles (EVs).
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